| 摘要 |
PURPOSE:To remarkably alleviate accuracy of waveform control of a semiconductor laser for reducing variation of output by using a-axis cut Nd:YVO4 as a solid state laser crystal to excite a semiconductor laser so that the optical and electric field direction becomes parallel with the c-axis of crystal. CONSTITUTION:A laser resonator is structured by providing a multilayer thin film mirror 3 of dielectric material at the end surface of the a-axis cut Nd:YVO4 crystal 4 in the side of a semiconductor laser 1 to achieve 100% reflectivity for 1064nm wavelength and a multilayer thin film of dielectric material to an output mirror 5 to achieve 80 to 98% reflectivity for 1064nm. Oscillation in the wavelength of 946nm and 1340nm can be realized as well as the wavelength of 1064nm by changing the wavelength of such multilayer thin film of dielectric material having high reflectivity. A semiconductor laser 1 is caused to provide the wavelength of 800nm to 815nm and phtoelectric field of laser beam to become parallel with the c-axis of the crystal 4. A laser beam radiated from the semiconductor laser 1 is condensed by a lens 2 and is then applied to the crystal 4. Thereby, Nd:YVO4 is excited and a laser beam of 1064nm can be extracted from an output mirror 5. As explained above, highly efficient excitation may be realized by selecting the direction of polarization for the crystal. |
