发明名称 SOFT MAGNETIC NITRIDE ALLOY FILM MAKING METHOD
摘要 <p>PURPOSE:To obtain an isotropic soft magnetic alloy nitride film by making a specified soft magnetic alloy nitride film by bias sputtering method, using the alloy target expressed by Ta', Mb', and Xc', and the gas wherein N2 is mixed in Ar. CONSTITUTION:Using the alloy target expressed by Ta', Mb', and Xc', and the gas wherein N2 is mixed in Ar, a soft magnetic alloy nitride film TaMbXcNd is made by sputtering method. But, T is at least one kind out of Fe, Co, and Ni, and M is at least one kind out of Nb, Zr, Ti, Ta, Hf, Cr, Mo, W, and Mn, and X is B, C, Si, Ge, and A, and N is nitrogen, and a', b', and c', and a, b, c, and d express atom percent, and those are made 70<=a'<=99, 0<=b'<=20, 0<=c'<=20, 1<=b'+c', 65<=a<=98, 0<=b<=20, 0<=c<=20, 1<=d<=20, 1<=b+c, a+b+c+d=100, respectively. Furthermore, this alloy film is heat-treated at not less than 300 deg.C and not more than 800 deg.C.</p>
申请公布号 JPH04137715(A) 申请公布日期 1992.05.12
申请号 JP19900260896 申请日期 1990.09.28
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OSANO KOICHI;SAKAKIMA HIROSHI;IHARA KEITA;SATOMI MITSUO;NAKO KUMIO;ONISHI YOICHI;TANAKA KUNIO;YAMANISHI HITOSHI
分类号 G11B5/31;C23C14/00;C23C14/34;H01F10/13;H01F10/14;H01F41/18 主分类号 G11B5/31
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