| 摘要 |
PURPOSE:To prevent breakdown due to concentration of an OFF current to the inside MOSFET at ON, OFF action when the device is to be utilized as an extraction diode, and to enhance the withstand voltage of the IGFET by a method wherein a P type layer provided as for the withstand voltage of the MOSFET for an N channel is made to have MOSFET structure. CONSTITUTION:The MOSFET constituted of an N<-> type source region and an insulated gate 5 is the same as usual, while in this method, an N<+> type region 8 is provided at a part of the surface of the P type layer 6 positioned at the circumference to be connected to the Al wiring 9 of a source electrode, and MOSFET structure is introduced also to the P type layer 6. Accordingly holes (h) injected at ON time are extracted through the MOSFET's on both sides at OFF time, and concentration of the current to the inside MOSFET is not generated as has been observed so far. Accordingly destruction of the diode is hardly generated. |
