| 摘要 |
PURPOSE:To improve characteristics of single crystal, by arranging polycrystal of II-VI compound semiconductor at a high temperature part of a crucible arranged in a sealed tube provided with temperature difference, forming an Li2Se atmosphere at a specified temperature in the crucible, and turning the polycrystal into single crystal by solid growth. CONSTITUTION:Polycrystal ZnSe which is an example of raw material 12 to be turned into single crystal and Li2Se which is dopant 13 for turning the original material into conductor are put in a crucible 11, which is put in a sealed tube 14 made of quartz as heat resistant material. The inside of the sealed tube is vacuumized at about 10<-6> Torr, and the top part of the tube is fused and sealed. The crucible 11 is so placed in a heating furnace that the crucible bottom part where the original material 12 and the dopant 13 for conductor are disposed is at the high temperature part, and the top part of the crucible is at the low temperature part of the heating furnace. In this state, heat treatment for, e.g. about two weeks is performed. Thereby the polycrystal line ZnSe as the raw material 12 is almost turned into single crystal. |
