| 摘要 |
PURPOSE:To allow the transfer of circuit patterns to desired sizes by comparing the width of the circuit patterns and the width of a reference circuit pattern and adding or subtracting a correction quantity according to these sizes. CONSTITUTION:This mask is formed to the pattern width obtd. by previously adding the correction quantity to the width of the circuit patterns finer than the reference circuit pattern and is formed to the pattern width obtd. by previously subtracting the correction quantity for the circuit patterns of the width larger than the width of the reference circuit pattern. For example, the actual mask pattern sizes are specified to 4.8, 10, 29.4mum when the patterns of 4, 10, 30mum are necessary in the circuit design of the circuit pattern 2 and the exposing is executed by using such mask 2, by which the patterns of the size complying with the circuit design are formed. |
