| 摘要 |
PURPOSE:To manufacture a photomask with being hardly influenced by backscattering by scanning only the edge pat of a pattern with ionic beam which is obtained by controlling an acceleration voltage based on data on backscattering intensity at the time of exposing with electronic beam on a descum processing stage. CONSTITUTION:At first, a metallic layer 2 such as chrome, etc., is vapor- deposited on a glass substrate 1, and then, a photoresist film 3 is applied on the metallic layer 2. And furthermore, a prescribed pattern is exposed with the electronic beam 4. Next, the photoresist film 3 is developed so as to form a resist-pattern 3A. Next, in order to remove only the residue 5, the descum processing in a plasma is performed in nearly 1/10 times as fast as a conventional processing. Next, only the edge part is successively scanned with the ionic beam 6 so as to form a pattern 3B where errors are corrected. At this time, the beam 6 is controlled based on the change quantity, etc., from a design value by the data on the backscattering intensity at the time of exposing with the electronic beam, and the size of the pattern 3A is corrected. At a final stage, the etching-off of the metallic layer 2 is performed while making the pattern 3B the mask, and the metallic pattern 2A is formed. |
