| 摘要 |
PURPOSE:To reduce a margin between a contact and a cell plate bar opening a contact of a data line without patterning a cell plate and by forming the cell plate by self-alignment. CONSTITUTION:After an insulating film 10 of a capacitor is formed, a cell plate 11 is formed and impurities are diffused. After an oxide film 12 is formed, a photo resist 13 is applied and a contact 14 of a data line is opened. Thereafter, the cell plate 11 is etched isotropically and a recess 15 is formed. The contact 14 is etched again to form a contact 16. Thereafter, heat oxidation is carried out to form an oxide film 17. When it is etched anisotropically, a contact hole is formed while leaving the oxide film 17, and the cell plate is also insulated from a contact part by self-alignment. Thereafter, a data line 18 is formed. Thereby, it is possible to form a space between a contact and the cell plate by self-alignment and to reduce a margin therebetween. |
