| 摘要 |
<p>PURPOSE:To stick a substrate and a thin-film fast and firmly by composing a buffer layer of an oxide containing Ti. CONSTITUTION:For manufacture a dielectric thin-film, a sapphire substrate 2 as a face (c) in 10mmX15mm is fixed into a reaction furnace first, the furnace is kept under 4Torr, and a substrate temperature is kept at 650 deg.C while saturated steam containing TIP, in which Ar gas is maintained at 50 deg.C at the flow rate of 100sccm, is introduced into the reaction furnace. A TiO2 film is formed on the top face of the sapphire substrate 2 for one hundred and twenty min after steam is introduced. The substrate temperature is elevated to 650 deg.C and the reaction furnace is kept under 10<-2>Torr or less, and ultraviolet rays are applied and saturated steam containing TEL maintained at 0 deg.C in 50sccm, saturated steam containing TIP kept at 50 deg.C in 100sccm and O2 gas at 25 deg.C in 100sccm are introduced respectively, and the thin-film of PbTiO3 is shaped onto the TiO2 film. For manufacture a dielectric thin- film device, the substrate temperature is maintained at 600 deg.C first, a lower electrode 6 consisting of Pt (platinum) film is formed onto the top face of the sapphire substrate 2 through sputtering under 2X10<-10>Torr, and the buffer layer 3 of a TiO2 film and the thin-film 1 of PbTiO3 are formed onto the top face of the lower electrode 6. A mask, to which a hole is bored and which is made of copper, is placed on the top face of the thin-film 1 of PbTiO3, and Al is vacuum-deposited into the hole section, thus shaping an upper electrode 7.</p> |
