| 摘要 |
PURPOSE:To coat a photoresist with a developer uniformly by applying a vapor treatment by using the developer and changing a photoresist surface from a hydrophobic property to a hydrophilic property. CONSTITUTION:In a 5% aqueous solution of TMAH (tetramethyl ammonium hydroxide), gaseous N2 is bubbled at a rate of 3L per one min. and gaseous TMAH is generated as a carrier of N2. The vapor treatment is carried out such that gaseous TMAH is exposed on a photoresist film formed on a wafer heated on a hot plate at 110 deg.C for about 30 seconds and then the property of the photoresist surface is changed from a hydrophilic property to a hydrophilic property. Thus the wetting property between the developer and the photoresist is improved and without increasing the amount of the developer, the developer is uniformly applied on the total surface of the wafer being coated with the photoresist. |
