| 摘要 |
PURPOSE:To form Schottky junction wherein forward current-voltage properties are favorable and effective barrier height is high and reverse current leak is small and properties are uniform by depositing a phosphorus oxide on a III-V compound semiconductor, which includes In and P, and heat-treating it at specified temperature and in specified atmosphere. CONSTITUTION:The surface of an InP substrate 1 with a resist film or the like, and at the rear is formed an ohmic electrode 4 consisting of an AuGe/Ni/ Au layer. Next, the surface treatment of the substrate 1 is performed, and after removal of a natural oxide film, a phosphorus oxide film is deposited at the surface of the InP substrate 1. And the InP substrate 1 is heat-treated for 30-60 minutes at a temperature of 300-360 deg.C in oxygen atmosphere at atmospheric pressure. Then, in the nitrogen atmosphere at atmospheric pressure, in is heat-treated for 30-60 minutes at a temperature of 320-380 deg.C in nitrogen atmosphere at atmospheric pressure so as to form an insulating film 2 consisting of phosphorus oxide at the surface of an InP substrate 1. Next, on the insulating film 2 is formed an Au Schottky electrode 3, 1mm in diameter by vacuum deposition method. |
