Superconducting device formed of oxide superconductor material.

摘要

A supeconducting device comprises a stacked structure composed of a first superconducting layer, a first insulating layer, a second superconducting layer, a second insulating layer and a third superconducting layer stacked on a substrate in the named order. The stacked structure has an end surface extending from the first insulating layer to the second insulating layer. A fourth superconducting layer is formed to cover the end surface of the stacked structure through a third insulating layer. The four superconducting layer is in electric connection to the first and third superconducting layer but isolated from the second superconducting layer by the third insulating layer. The first to fourth superconducting layers are formed of an oxide superconductor thin film. A silicon containing layer formed adjacent to at least one of the first, third and fourth superconducting layers, but not in direct contact with the other superconducting layers. <IMAGE>