SPUTTERING TARGET AND PRODUCTION THEREOF.

摘要

A sputtering target having a high-density fine mixed texture wherein metallic silicide molecules are linked in a chain to form a metallic silicide phase and noncontinuous silicon phases are present in the interstices of the metallic silicide phase and containing 100 ppm or less of carbon. Since the target has a high density and a high strength, the amount of particles generated in sputtering is reduced. Since the carbon content is reduced so as to prevent the carbon from being mixed into the formed film, it is possible to produce semiconductor products with a high quality and a high accuracy.