METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE HAVING A POLYCRYSTALLINE SILICON-ACTIVE REGION,申请号EP19840116302-传众专利搜索

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发明名称	METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE HAVING A POLYCRYSTALLINE SILICON-ACTIVE REGION
摘要
申请公布号	EP0152625(B1)	申请公布日期	1992.05.06
申请号	EP19840116302	申请日期	1984.12.24
申请人	SONY CORPORATION	发明人	HAYASHI, HISAO
分类号	H01L21/8238;H01L27/06;H01L27/092;H01L27/12;H01L29/04;H01L29/786	主分类号	H01L21/8238
代理机构		代理人
主权项
地址

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