| 摘要 |
PURPOSE:To grow a semiconductive crystal having P-type electroconductive properties by adding N-atom to a semiconductor belonging to II-VI group compound in the periodical table in a specific condition in a crystal growth by a molecular beam epitaxial method. CONSTITUTION:In a crystal growth of a semiconductor (e.g. ZnSe) belonging to II-VI group compound in the periodical table by a molecular beam epitaxial method, an object is irradiated with N-plasma in growing of said semiconductor to add N-atom to the semiconductor. |
