发明名称 |
Flash-EPROM with enhanced immunity from soft-programming of reference cells. |
摘要 |
<p>The probability of soft-programming of the reference cells of a FLASH-EPROM memory may be excluded by having a decoupling transistor of a type of conductivity opposite to that of the cells functionally connected between the gate of each reference cell and the respective row line. Moreover the elimination of the electrical stresses to which the reference cells are subjected during the repeated programming cycles of the memory cells, increases the stability of the respective reference values of threshold and current level provided by the reference cells, thus increasing the reliability of the device. <IMAGE></p> |
申请公布号 |
EP0484298(A2) |
申请公布日期 |
1992.05.06 |
申请号 |
EP19910830472 |
申请日期 |
1991.10.30 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.P.A. |
发明人 |
NATALE, VIRGINIA;PETROSINO, GIANLUCA;SCARRA', FLAVIO |
分类号 |
G11C17/00;G11C16/04;G11C16/28 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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