发明名称 |
Multicellular FET having a Schottky diode merged therewith |
摘要 |
A semiconductor power switching device comprises a multicellular FET structure with a Schottky barrier diode structure interspersed therewith with at least some of the FET cells being free of Schottky barrier portions. The ratio of Schottky barrier contact area to FET cell area in the overall device may be adjusted to tailor the device for operation at specific current densities.
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申请公布号 |
US5111253(A) |
申请公布日期 |
1992.05.05 |
申请号 |
US19900576125 |
申请日期 |
1990.08.28 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
KORMAN, CHARLES S.;BALIGA, BANTVAL J.;CHANG, HSUEH-RONG |
分类号 |
H01L27/07;H01L29/78 |
主分类号 |
H01L27/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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