发明名称 Sample-and-hold switch with low on resistance and reduced charge injection
摘要 An improved sample-and-hold circuit includes a first MOSFET transmission gate connected between an analog input voltage and a storage capacitor. The first transmission gate is constructed to have low on resistance and operates for a predetermined period of time to rapidly charge the capacitor to input voltage. A second, smaller MOSFET transmission gate having reduced charge injection characteristics is connected in parallel with the first gate. The second gate is turned on coincidentally with the first gate but remains on for a short period of time after the first gate has been switched off.
申请公布号 US5111072(A) 申请公布日期 1992.05.05
申请号 US19900574176 申请日期 1990.08.29
申请人 NCR CORPORATION 发明人 SEIDEL, DURBIN L.
分类号 G11C27/02;H03K17/16;H03K17/687 主分类号 G11C27/02
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