发明名称 |
Semiconductor device with a multi-stepped source region and method for producing the same |
摘要 |
A semiconductor device includes a first region, a well-shaped second region formed in the first region and a third region formed in the well-shaped second region. Both the first region and the third region have a first conductive type, the well-shaped second region has a second conductive type. A gate electrode is formed on a channel of the well-shaped second region. The channel is sandwiched between the first region and the third region. According to the present invention, the depth of the third region is very deep in a portion near the channel and is very shallow in a portion far from the channel. A resistance of the well-shaped second region near a portion of the third region far from the channel is lower than near the portion of the third region near the channel.
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申请公布号 |
US5111258(A) |
申请公布日期 |
1992.05.05 |
申请号 |
US19910742081 |
申请日期 |
1991.07.31 |
申请人 |
FUJITSU LIMITED |
发明人 |
SASAKI, MUTSUMI;TAKAHASHI, KOJI;SUZUKI, SHUICHI |
分类号 |
H01L21/336;H01L29/06;H01L29/08;H01L29/739;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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