发明名称 ARRAY OF THIN FILM TRANSISTOR
摘要 <p>The TFT arrangement structure for preventing the short between capacitor electrodes for charge and discharge of display signals comprises a source electrode (10) having first and second source electrodes (10A)(10B) isolated by a insulating layer (15), a gate electrode (20), a drain electrode (30), the electrodes (10,20,30) acting as a switching electrode, a pixel electrode (50) acting as a display electrode and a capacitor electrode. The source, gate and drain electrodes (10,20,30) are formed in the direction of length of the electrode and in parallel with one another. The second source electrode (10B) is arranged on the pixel electrode horizontally, a side end of which is connected to the pixel electrode (50).</p>
申请公布号 KR920003596(B1) 申请公布日期 1992.05.04
申请号 KR19890003541 申请日期 1989.03.21
申请人 SAM SUNG ELECTRON DEVICES CO., LTD. 发明人 CHOI, KWANG - SOO
分类号 H01L27/13;(IPC1-7):H01L27/13 主分类号 H01L27/13
代理机构 代理人
主权项
地址