| 摘要 |
PURPOSE: To provide comparatively high output, while reducing distortions by letting nonuniform photon density in the state of more improving the photon density appear at the rear part of a cavity specified by a front segmenting plane and a rear segmenting plane, rather than the rear part during the operation of a laser at the main body of a semiconductor to form the cavity. CONSTITUTION: The main body of semiconductor has a positive area (active area) 52 and a lattice 53, and the latter has a phase shift 54 of λ/4. Ar coating 57 is applied (entirely or partially) over its front segmenting plane 55, and HR coating 58 is applied (entirely or partially) over its rear segmenting plane 56. Further, this laser has ordinary electrodes 59 and 59'. Thus, since the phase shift is positioned at the rear part of the lattice, possibility for the laser of having a 'sweet spot' can be markedly improved, and expected estimate allowable in its use for an analog communication system can be increased. |
