| 摘要 |
<p>PURPOSE:To reduce the stress on a semiconductor wafer and reduce the possibility of mechanical destruction by forming a mask pattern, which has separating grooves, on the wafer and etching the separating grooves by wet etching so as to separate semiconductor chips. CONSTITUTION:A resist mask pattern, which is provided with openings 3P and 6P and sensor chip separating openings 11P and 12P and that masks areas corresponding to a frame 2, a neck 4, a spindle area 5 and a spindle supporting beam 7 in a sensor area (1P) and an area 13P corresponding to a beam which prevents the chips from being dispersed, is formed for a silicon wafer 20 in order to simultaneously form the taken out grooves 3 and 6 of sensor base 1 and a taken out groove for separating the sensor chips by etching. The silicon wafer 20 provided with the mask pattern is anisotropically etched. The wafer 20 becomes a flat plane which has the plural lined up sensor bases 1 (1P) permitting the mask opening 11P to be a taken out groove and the sensor bases to be alternatingly connected only at the part of a beam mask 13P. The chips are easily separated by applying force on the remained beam under the beam mask 13P.</p> |
