| 摘要 |
PURPOSE:To prevent generating a hollow by providing an alloy layer between a compound semiconductor substrate and an insulating layer and forming a bonding pad for a compound semiconductor element on the surface of the substrate using the specific alloy layer. CONSTITUTION:A bonding pad for a compound semiconductor element is provided with an alloy layer 31 which constitutes eutectic crystal with at least one of the constituting elements of a compound semiconductor substrate 11 in an area corresponding to a bonding pad area between the substrate 11 and an insulating layer 15 and in the vicinity of the area. A surface protecting film 21 is provided on the part which is on an electrode metal layer 13 and is not used for the bonding. The substrate 11 is composed of an n-type GaAs substrate, and the layer 31 is constituted of an AuGe-Ni layer. |
