Processing trench edges in semiconductor substrates - using stream of particles, for simple, accurate silicon@ solar cell mfr.

摘要

Processing an upper edge section of trenches etched in semiconductor substrates with a stream of particles comprises directing an anisotropic stream of particles at a selected angle of incidence W on to the substrate surface so that the lower edge of the trench, which is not to be processed, is shielded by the opposite edge of the substrate surface. USE/ADVANTAGE - The method is simple, accurate, and can be used instead of high-output solar cells made from crystalline Si. The method is simple, accurate and can be used instead of costly lithographic techniques. It can be used for any shape of trench.