Semiconductor device with inexpensive substrate - comprises ion-implanted impurity-doped semiconductor layers, avoiding high-temp. heat-treatment of soda lime glass substrate

摘要

Device has semiconductor layer(s) of low specific resistance which are doped with an impurity element. Ions are implanted in semiconductor layer(s), to reduce the resistance of the latter. A three-dimensional circuit element, comprises semiconductor devices. Pref. substrate is an insulating plate, most pref. of soda-lime glass, and semiconductor layer(s) forms cpds. or resistances. The impurity element is implanted in semiconductor layer before ions are implanted in the specified semiconductor layer. The substrate is heated to below its softening pt. during implantation, (100-450 deg. C). ADVANTAGE - Electrical properties are not impaired, as during heat treatment.