发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To operate a device with 1.5V battery voltage and to read out data at a high speed by pairing bit lines and providing sense amplifiers in both ends of each pair. CONSTITUTION:Bit lines 4 are paired, and sense amplifiers (transistors TRsQ8 to Q13 and TRsQ20 to Q25) are provided in both ends of each pair. The potential of one bit line is set to the reference level to perform differential sensing, and data are simultaneously read out from memory cells connected to the same word line 3, and it is sufficient if read data are transferred to an output buffer, and then, data is read out at a high speed. Read data are successively transferred to the output buffer to perform the serial access. Since bit lines 4 and sense amplifiers Q8 to Q13 and Q20 to Q25 correspond to each other in 1:1, they are used as column latches for temporary latch of write data, and the device is operated by 1.5V; and therefore, the circuit constitution is simplified.</p>
申请公布号 JPH04129091(A) 申请公布日期 1992.04.30
申请号 JP19900250486 申请日期 1990.09.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 HAYASHIGOE MASANORI
分类号 G11C11/41;G11C16/06;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C11/41
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