| 摘要 |
<p>A semiconductor laser for providing distributed feedback by gain coupling on an active layer (5) or light absorbing layer with a periodic variation in thickness in order to control periodic perturbation of the refractive index caused by the change in thickness of the active-layer (5) or light-absorbing-layer and obtain distributed feedback of light mainly due to the periodic perturbation of gain coefficient. The laser comprises structure made by combining layers (6) and (7) with different refractive indexes for cancelling the periodic change of the refractive index caused by the corrugated structure of the active layer (5) or light absorbing layer.</p> |
