发明名称 METHOD OF MAKING DIODES, IN PARTICULAR PIN AND CHARGE DIODES
摘要 1. Method of producing diodes, in particular PIN and charge storage diodes, using dry heat method and subsequently load testing them on durability frames; is characterised in that diodes are subjected to 80/150 degrees C heat for 70/120 hours, load tested for 70/120 hours on the durability frame with the maximum constant current, downstream of the flow, applicable to a given diode type under the technical conditions.
申请公布号 PL157034(B1) 申请公布日期 1992.04.30
申请号 PL19880276779 申请日期 1988.12.28
申请人 发明人
分类号 H01L;H01L21/324;H01L29/06;(IPC1-7):H01L21/324 主分类号 H01L
代理机构 代理人
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