| 摘要 |
<p>A fast turn-off thyristor including a first active shunt region (20, 22) in the cathode gate region (13) connected electrically to the anode terminal for shunting carriers around the anode gate region (15, 28) in response to the thyristor being on and a second shunt region (19, 21) in the anode gate region (15) connected electrically to the cathode terminal for shunting carriers around the cathode gate region (13, 25) in response to the thyristor being on. These active shunts are inactive until after the thyristor is turned off. The active shunts are transistors (Q3, Q4) in parallel with the pair of interconnected transistors (Q1, Q2) which are for a PNPN thyristor.</p> |
