| 摘要 |
PURPOSE:To enable to form easily an insulating layer on the outer surface of a conductive layer with regard to the semiconductor of bipolar transistor, MISFET, etc., by a method wherein semiconductor regions and conductive layers of the semiconductor device are formed having self-alignment with each other and the semiconductor regions are positioned surely in an element forming region. CONSTITUTION:The semiconductor device is formed as an NPN type bipolar transistor being formed in the element forming region 23 divided and partitioned by insulating regions 21 formed from the main face side in a semiconductor substrate 15 making the region interposed between semiconductor regions 26, 28 formed in this element forming region 23 as a collector region, semiconductor regions 13, 26 as to be used both as collector compensation region and as lead out region, a semiconductor region 27 as a collector lead out region, a conductive region 44 as a collector electrode, a conductive layer 51 as a collector wiring, a semiconductor region 28 as a base region, a semiconductor region 41 as a base lead out region, a conductive layer 39 as a base electrode, a conductive layer 52 as a base wiring, a semiconductor region 42 as an emitter region, a conductive layer 43 as an emitter electrode and a conductive layer 50 as an emitter wiring. |
