发明名称 Opto=electronic integrated circuit mfr. - by depositing mask layer on substrate surface and forming mask for selective growth
摘要 The integrated circuit, with an optical element part and a signal processing part is mfd. by first depositing a mask layer on the substrate surface and removing certain regions for forming a mask. In a preset section of the substrate surface a concave zone is formed by etching, using the mask for a selective growth. The crystal layer, as a future optical element, is formed in the concave zone by crystal growth, using the mask. The crystal layer surface is smoothed by grinding the crystal protrusion and the concave zone edges. Then the mask is removed and a finish polishing is applied by mechanochemical etching. ADVANTAGE - Grown crystal layer embedding in substate, without forming step on water surface.
申请公布号 DE4116696(A1) 申请公布日期 1992.04.30
申请号 DE19914116696 申请日期 1991.05.22
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 SHIBA, TETSUO;TAKAHASHI, SHOGO, ITAMI, HYOGO, JP
分类号 H01L27/14;H01L21/205;H01L21/8252;H01L27/144 主分类号 H01L27/14
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