| 发明名称 |
HALBLEITERSCHICHTSTRUKTUR MIT EINER ALUMINIUM-SILIZIUM-LEGIERUNGSSCHICHT. |
| 摘要 |
A semiconductor layer structure includes an alloy layer (13) of aluminum and silicon formed on a silicon substrate (11). The concentration of silicon contained in the aluminum-silicon alloy layer (13) is within a range of 10 to 75 weight percent. A barrier layer (14) is formed on top of the aluminum-silicon alloy layer, and a metallic layer (15) is formed on top of the barrier layer (14). |
| 申请公布号 |
DE3869519(D1) |
申请公布日期 |
1992.04.30 |
| 申请号 |
DE19883869519 |
申请日期 |
1988.08.25 |
| 申请人 |
FUJITSU LTD., KAWASAKI, KANAGAWA, JP |
发明人 |
WATANABE, KIYOSHI, YOKOHAMA-SHI KANAGAWA 222, JP |
| 分类号 |
H01L23/532;H01L29/47;(IPC1-7):H01L23/48;H01L29/40 |
主分类号 |
H01L23/532 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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