MANUFACTURE OF MIS TYPE SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain a desirable drain current characteristic by a method wherein an insulating film is formed on a new surface of the compound semiconductor substrate. CONSTITUTION:The inside of a reaction furnace 43 is exhausted and supplied with inactive gas from an inactive gas source 31 and further, supplied with hydrogen chloride gas from a hydrogen chloride gas source 33. Meanwhile, a heater 41 is commutated to obtain the new surface on the compound semiconductor substrate 44 by a gaseous phase etching using the hydrogen chloride gas. Then, the inactive gas is discharged outside and insulating film forming gas is supplied from an insulting film forming gas source 32 to the reaction furnace 43 to form the insulating film by CVD method on the surface of the compound semiconductor substrate 44.