METODO PER LA FABBRICAZIONE DI UN DISPOSITIVO CMOS A DOPPIO POZZETTO,申请号IT1992TO00366-传众专利搜索

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发明名称	METODO PER LA FABBRICAZIONE DI UN DISPOSITIVO CMOS A DOPPIO POZZETTO
摘要
申请公布号	ITTO920366(D0)	申请公布日期	1992.04.28
申请号	IT1992TO00366	申请日期	1992.04.28
申请人	HYUNDAI ELECTRONICS INDUSTRIES CO.,LTD.	发明人	LEE DAI HOON;JI HYUNG LIM
分类号	H01L21/8238;H01L27/092	主分类号	H01L21/8238
代理机构		代理人
主权项
地址

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