发明名称 |
HETEROJUNCTION P-I-N PHOTOVOLTAIC CELL |
摘要 |
HETEROJUNCTION P-I-N PHOTOVOLTAIC CELL A heterojunction p-i-n photovoltaic cell having at least three different semiconductor layers formed of at least four different elements comprises a p-type relatively wide band gap semiconductor layer, a high resistivity intrinsic semiconductor layer, used as a n absorber of light radiation, and an n-type relatively wide band gap semiconductor layer. The intrinsic layer is in electrically conductive contact on one side with the p-type layer and on an opposite side with the n-type layer. First and second ohmic contacts are in electrically conductive contact with the p-type layer and the n-type layer, respectively. |
申请公布号 |
CA1299715(C) |
申请公布日期 |
1992.04.28 |
申请号 |
CA19870549695 |
申请日期 |
1987.10.20 |
申请人 |
AMETEK, INC. |
发明人 |
MEYERS, PETER V.;LIU, CHUNG-HENG;FREY, TIMOTHY J. |
分类号 |
H01L31/04;H01L31/073;H01L31/077;H01L31/18 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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