MASK AND PRODUCTION OF SEMICONDUCTOR DEVICE FORMED BY USING THIS MASK

摘要

PURPOSE:To obtain a flat embedding layer by depositing a CVD film of the film thickness half the groove width so as to form islands at the intersected points of the grooves and etching back the film at the time of film formation. CONSTITUTION:Mask patterns disposed with the island patterns 3 at the centers of the intersected points of the grooves in element separating regions 2 enclosing element forming regions 1 are used and a resist mask is formed by lithography. Namely, the deep grooves 2' are formed and after SiO2 4 is formed by thermal oxidation on the inside walls of the grooves, polycrystalline Si 5 is deposited by a CVD method and is formed to the film thickness of >=1/2 the groove width. Finally, the polycrystalline Si exclusive of the inside of the grooves is completely removed by executing plasma etching. The flat groove embedding layer is formed in this way without depositing the polycrystalline Si which is thicker than needed.