| 摘要 |
PURPOSE:To lessen processes after a write process in number by a method wherein by a method wherein a gate electrode is formed, a transistor forming region is covered with mask so as to make a write transistor forming part selectively exposed, and certain conductivity type impurity ions are implanted. CONSTITUTION:A gate electrode 7 of poly-Si is formed. This process includes many detailed processes, but these can be previously executed before a user specification write process. In succession, ion implantation 6a correspondent to ion implantation 6 is carried out using a resist mask 5 as a user specification write process. In the implantation of ions 6a into an exposed transistor forming region, the gate electrode 7 also serves as a mask. The resist mask 5 is removed after the implantation of ions 6a. This process is carried out when a corresponding user mask is prepared after a user specification is determined. In succession, an SiO2 side wall 13 is formed on the side face of the gate electrode 7. Therefore, a write process can be executed after a gate electrode forming process is finished. |
