| 摘要 |
PURPOSE:To form a thin silicon oxide film having a uniform film thickness and long life on a silicon nitride film by forming the silicon oxide film in a dry oxygen atmosphere which is lower in reactivity than the conventional steam oxidizing atmosphere. CONSTITUTION:After a silicon nitride film 9 made of Si3N4 and having a film thickness of, for example, 70Angstrom is formed so as to cover a capacitor electrode 8 by, for example, a CVD method and RIE, a silicon oxide film 10 having a film thickness of, for example, 6Angstrom is formed on the film 9 by oxidizing the surface of the film 9 in a dry oxygen atmosphere heated to, for example, 850 deg.C. As a result, a capacitor insulating film composed of the silicon nitride film 9 and silicon oxide film 10 is formed. When a capacitor counter electrode 11 made of polysilicon and having a film thickness of, for example, 1,500Angstrom is formed by, for example, a CVD method and RIE so as to cover the silicon oxide film 10, a capacitor constituted of the capacitor insulating film composed of the capacitor electrode 8 and silicon oxide film 10 and the capacitor counter electrode 11 is formed. |
