| 摘要 |
PURPOSE:To prevent the formation of an insulating film by a reaction with a nonsingular crystal silicon semiconductor CTO, and to obtain a semiconductor layer having high reliability by forming a crystalline nonsingular crystal semiconductor, which closely adheres to an I type semiconductor and has excellent electric conductivity, and fitting chemically stable specific silicon carbide on the upper surface of the nonsingle crystal semiconductor. CONSTITUTION:A semiconductor being in contact with an I layer consists of a nonsingle crystal semiconductor, and the same conduction type SixC1-x (0<x<1) is formed thinly on a semiconductor, particularly, a microcrystalline or polycrystalline P or N type semiconductor. Gate electrodes such as gate electrodes 11 consisting of N type silicon are prepared on a quartz substrate 1, and they are prepared by oxidizing gate insulators in a halogen element atmosphere. A P type semiconductor to which boron is implanted is prepared through a plasma vapor phase method, silicon oxide is prepared through a CVD method, resists except the upper sections of the gate electrodes 11 are removed, and only silicon oxide is left. A microcrystalline N silicon semiconductor 21 is shaped on the whole surface, and SixC1-x(x=0.9) 22 is formed. An ITO19 is formed, silicon oxide is removed through a lift-off method, and the N type semiconductor 21 is formed. |
