发明名称 |
Semiconductor solid soln - by deposition from melt, for homogeneity and high purity |
摘要 |
<p>Prodn. of solid soln. of semi conductor material of desired compsn. with at least 2 constituents from liquid compsn. comprises a) forming appropriate melt at elevated temp; b) introducing source with at least one of the constituents; c) dipping substrate into liquid melt at a distance from place where source is introduced; and d) maintaining steady temp. difference between source and substrate during crystal formation. Suitable melts have compsn. AB 1-xCx or A 1-xBxC (in which A and in second case B is Gp. 11 and/or 111 element; C and in first case B is Gp. VI or V element).</p> |
申请公布号 |
FR2106257(A5) |
申请公布日期 |
1972.04.28 |
申请号 |
FR19710031912 |
申请日期 |
1971.09.03 |
申请人 |
HEWLETT PACKARD CY |
发明人 |
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分类号 |
C30B19/06;C30B19/08;C30B19/10;(IPC1-7):01J17/00;01L7/00 |
主分类号 |
C30B19/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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