发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 PURPOSE:To realize dynamical support between wiring layers by means of the intersecting section of upper layer wiring with lower layer wiring so as to improve the resisting properties against thermal and mechanical shocks by providing a layer insulating film at the intersecting section of the upper and lower layer wiring except via hole sections. CONSTITUTION:The second layer wiring 6 of aluminum, etc., is formed on the first layer wiring 2 with the first layer inorganic insulating film 3 of a silicon oxide film, etc., in between. The insulating film 3 exists at the intersecting section of the wiring 2 and wiring 6 except via hole sections provided for forming connection and the second layer wiring 6 is connected with the first layer wiring 2 through via holes. Since the second layer wiring 6 intersects the first layer wiring 2 through the first layer inorganic insulating film 3 at sections other than the via holes not like an aerial wiring structure, the second layer wiring 6 is dynamically supported by the first layer wiring even at the intersecting section.
申请公布号 JPH04127453(A) 申请公布日期 1992.04.28
申请号 JP19900248235 申请日期 1990.09.18
申请人 NEC CORP 发明人 KATO TAKUYA
分类号 H01L21/768;H01L23/522 主分类号 H01L21/768
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