发明名称 X-RAY MASK INSPECTING METHOD
摘要 PURPOSE:To make it possible to conduct a mask pattern inspection in a highly precise manner by a method wherein the mask pattern, formed on an X-ray mask, is transferred by X-ray exposure on a composite substrate on which a non-light transmitting film is formed on a light-transmitting substrate, a photo mask having a non-light transmitting pattern which is accurately coincided with a light-transmitting substrate, is formed and this projected image is inspected. CONSTITUTION:A chromium (Cr) film 2 is formed on a flat-surface transparent quartz substrate 1, which is a translucent substrate, as a non-translucent film, an inspection composite substrate 3 is formed, an X-ray resist film 4 is formed and solidified by drying thereon, and an X-ray exposing operation is conducted using the X-ray mask 5 to be inspected. Then, a photosensitive region 44 is removed by dissolution by developing, resist pattern 4A and 4B are formed and solidified on the non-translucent film 2. Then, the Cr film 2 is removed by selective etching using the above-mentioned resist patterns as a mask, the resist film 4 is removed, and non-translucent Cr film patterns 2A and 2B, having the arrangement corresponding to the mask patterns 53A and 53B of the X-ray mask 5, size, shape, defects and the like, are formed on the mask patterns 53A and 53B of an X-ray mask 5. The Cr film patterns 2A and 2B are inspected with a projected pattern inspector in which visible light is used for inspection.
申请公布号 JPH04127515(A) 申请公布日期 1992.04.28
申请号 JP19900249224 申请日期 1990.09.19
申请人 FUJITSU LTD 发明人 URAKUCHI MASAHIRO
分类号 G03F1/84;G03F1/86;H01L21/027 主分类号 G03F1/84
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