| 摘要 |
<p>PURPOSE:To reduce a capacity among a source electrode and a gate electrode, and a counter electrode and to prevent the rising speeds of a source signal and a gate signal from decreasing by providing a transparent film between a transparent pixel electrode and a substrate. CONSTITUTION:The transparent film 14 is provided between the pixel electrode 2 of a thin film transistor array substrate 1 and the substrate 1. Although SiN is used for the film 14, a transparent insulating film of SiO2, polyimide, etc., may be used and further a transparent conductive film of SnO2, ITO, etc., is also usable. In this structure, the distances between the surface of the counter electrode 11 and the surfaces of a source electric conductor 5 and a gate electric conductor 3 can be made longer than those of a conventional structure when the distance (cell gap) between the surface of the counter electrode 11 and the surface of the pixel electrode 2 is equal, and consequently the capacity among the source electrode 5 and gate electrode 3, and counter electrode is reducible on the condition of the same cell gap as compared with the conventional structure, thereby improving signal rising characteristics.</p> |
