HORIZONTAL TYPE PHOTO RECEIVING DEVICE AND ITS MANUFACTURING METHOD

摘要

The pin photo diode for using trench etching to improve the photoelectric conversion rate and response rate comprises first and second trenches (45)(51) formed on a semiconductor substrate (41) with low concentration of N-impurities, a P diffusion region (47) with high concentration of P-impurities formed on the first trench (45), an N diffusion region (53) with high concentration of N- impurities, a photoelectric conversion region (50) placed between the diffusion regions (47) and (53) and a light receiving film (57) formed on the photoelectric conversion region (50), thereby receiving external lights to convert an optical signal into an electric signal.