| 摘要 |
PURPOSE:To enable a gate oxide film to be hardly broken down by a method wherein a MOS capacitor is formed in a trench structure in a semiconductor device wherein a gate and MOS capacitor of a MOS transistor are continuously formed into one body. CONSTITUTION:A MOS capacitor 9 is formed in a trench structure. Next, the surface area of the MOS capacitor is narrowed to lessen the charge amount during ion-implantation step. Through these procedures, a gate oxide film can be hardly broken down. |
