发明名称 SECONDARY ION MASS SPECTROMETRY
摘要 PURPOSE:To prevent the reduction in resolution in a facial direction by sputtering a sample with a primary ion beam, and by making the focal point of the primary ion beam identical with the surface of the sample, correspondent to the sputtering. CONSTITUTION:When a board 4 is lifted, the amount of receiving light by a pair of photodiodes 9, 11, is changed, and the amount of receiving light is fed-back to a calculation controller 13. The board 4 is thereby lifted until the amount of receiving light detected by a pair of photodiodes 9, 11 becomes identical, namely, until the sputtered surface of a semiconductor 5 becomes identical with a focal point of a primary ion beam I1. Even when the surface of the semiconductor 5 is sputtered, the position of the sputtered surface is controlled to be identical with the focal point of the primary ion beam I1. The reduction in resolution in the facial direction of a secondary ion beam I2 to be measured by a measurement part 7, is thus prevented.
申请公布号 JPH04126347(A) 申请公布日期 1992.04.27
申请号 JP19900246045 申请日期 1990.09.18
申请人 TOSHIBA CORP 发明人 MUKAI KIICHIRO
分类号 G01N27/64;G01N9/24;G01N23/22;H01J49/06;H01J49/26 主分类号 G01N27/64
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