发明名称 METHOD OF FORMING ETCHING RESISTANCE PATTERN
摘要 PURPOSE: To simplify alignment and to exactly reproduce patterns by forming photoresist patterns on a supporting substrate and sticking this substrate to a receptive substrate by using a curable liquid adhesive, thereby transferring these patterns to this receptive substrate. CONSTITUTION: The photoresist layer 2 is formed on the flat and ray transmissible supporting substrate 2 and the photoresist patterns 4 are formed in the method for forming the patterns which are resistant to etching on the substrate. Next, the substrate 2 holding the patterns 4 is stuck to the receptive substrate 6 by using the curable liquid adhesive 5 between these substrates in such a manner that the resist 1 side faces the substrate 6. The adhesive 5 is cured by light radiations having a chemical effect. The substrate 2 is then removed to transfer the patterns 4 to the substrate 6. The patterns corresponding to the patterns 4 transferred from the substrate 2 onto the substrate 6 are thereafter dry developed by oxygen plasma or oxygen reactive ion etching.
申请公布号 JPH04125562(A) 申请公布日期 1992.04.27
申请号 JP19900233093 申请日期 1990.09.03
申请人 IND TECHNOL RES INST 发明人 HAYASHI NORIYOSHI
分类号 G03F7/40;G03F7/16;G03F7/36;H01L21/027;H01L21/30;H01L21/302;H01L21/3065 主分类号 G03F7/40
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