| 摘要 |
PURPOSE:To make the title mask excellent in patterning accuracy and suited to mass production by containing nitrogen gas in a reactive gas containing carbon bromide trifluoride to be used in reactive ion etching. CONSTITUTION:In the manufacture of a mask for exposure to X-rays using a reacting ion etching method to be conducted by the use of a gas containing carbon bromide trifluoride as reactive gas, said reactive gas contains nitrogen gas. For example, a silicon dioxide film 2 is formed on a plate body l of tantalum, gold, etc., and a photoresist film 3 is formed on the silicon dioxide film. Then, after the photoresist film 3 has been selectively exposed and developed into a desired pattern for the purpose of patterning the photoresist film 3, the silicon dioxide film 2 is etched by reactant ion etching, etc. Subsequently, said substrate is inserted into a parallel-plate type reactant ion etching apparatus and the reactive gas containing 3-7 molar % nitrogen in carbon bromide trifluoride is supplied for the purpose of conducting the reactive ion etching. |
