| 摘要 |
The invention relates to photosensitive semiconductor devices and more particularly linear arrays having several parallel lines of photoconductor points and operating in charge integration and transfer mode. The object of the invention is particularly to reduce a light crosstalk effect. The device of the invention includes a photosensitive surface (SP) divided into elementary photosensitive surfaces (S11 to SMn) arranged in lines (L1 to Ln) and in columns (C1 to CM). Each column constitutes a shift register which ends in a storage cell (CS1 to CSM) of a read register (RL) formed by a shift register of the charge-transfer type: the read register (RL) being on the same semiconductor substrate (10) as the photosensitive surface (SP). According to one characteristic of the invention, the device includes an intermediate region (ZI) protected from light which serves to constitute a separation distance (DS) between the photosensitive surface (SP) and the read register (RL). <IMAGE>
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