METHODS OF PRODUCING ANTIMONY-CONTAINING LAYERS ON SEMICONDUCTOR BODIES

摘要

1276012 Antimony-containing layers on semiconductor bodies WESTERN ELECTRIC CO Inc 29 May 1969 [31 May 1968] 27174/69 Heading C1R [Also in Division H1] A semi-conductor device is made by exposing at least a portion of the surface of a semiconductor body to a gaseous mixture including trimethylstibine in a carrier gas and silane at a temperature sufficient to produce an antimonycontaining layer on the said surface portions. The gaseous mixture may also comprise an oxidant e.g. oxygen wherein an antimony oxide containing layer is deposited on the body. The carrier gas advantageously includes nitrogen and is at a temperature of from 300-400‹ C. A further layer, consisting essentially of silica, may be grown over the antimony-containing layer and the body then heated to diffuse antimony into the body. Suitable semi-conductor bodies are silicon, germanium or a group III-V compound semi-conductor.