| 摘要 |
PURPOSE:To obtain a phase shift mask whose structure is simple, which is easily realized and which is effective on the formation of a fine pattern by setting the side wall of a transparent coating film formed on the side surface of a metallic film pattern as a phase shifter. CONSTITUTION:This mask is provided with a transparent substrate (quartz substrate) 1, the metallic film pattern (chrome film pattern) 2 formed on the substrate 1, and the side wall 4 of the transparent coating film formed on the side surface of the pattern 2 and constituted so that the side wall 4 may be the phase shifter. Namely, the distinction of intensity distribution of light at the end of the pattern 2 is sharper in the case that the side wall 4 of the transparent coating film exists than in the case that the side wall 4 does not exist. Then, the side wall 4 is easily formed by adding a few stages after forming the mask. Namely, it is sufficient to accumulate the transparent coating film (SiO2 coating film) 3 on the conventional mask. Thus, the phase shifter is easily formed and the phase shift mask having a large phase shift effect is obtained. |
